LED Lighting Devices from Nichia

Japanese chemical engineering and manufacturing company, headquartered in Tokushima, Japan. Specializes in the manufacturing and distribution of phosphors, including light-emitting diodes (LEDs), battery materials, and calcium chloride.

Light Emitting Diode – InGan LED NICHIA

Light Emitting Diode - InGan LED NICHIA

Nichia 219 white LED offers typical 140 lumen output at 1 W input power with 5,000 K color temperature. Using a uniformly phosphor coated chip, Nichia 219 has the industry leading source brightness and tightest optical footprint.

High Power Point Source White Led NVSx219AWe rolled out a better idea

The spatial color uniformity is also optimized with Nichia’s leading phosphor technology. At 350 mA drive current, the typical forward voltage is only 3.0 V. Additionally, this package is capable of drive currents up to 1.5 A.

NICHIA – Semiconductors and Materials

Japanese chemical engineering and manufacturing company, headquartered in Tokushima, Japan. Specializes in the manufacturing and distribution of phosphors, including light-emitting diodes (LEDs), battery materials and calcium chloride.

NICHIA – Semiconductors and Materials

Products include Ultraviolet LEDs (UV-LEDs), Light Emitting Diode (InGaN LED), LASER DIODEs and Compound Semiconductor Materials. Fine Chemicals and Special Materials for electronic component manufacture.

NICHIA - Semiconductors and Materials

Nichia 219 white LED offers typical 140 lumen output at 1 W input power with 5,000 K color temperature. Using a uniformly phosphor coated chip, Nichia 219 has the industry leading source brightness and tightest optical footprint. The spatial color uniformity is also optimized with Nichia’s leading phosphor technology. At 350 mA drive current, the typical forward voltage is only 3.0 V. Additionally, this package is capable of drive currents up to 1.5 A.”

Shuji Nakamura’s invention of the first high brightness blue-light LED, which was based on gallium nitride lead to the LED Lighting Phenomena.

High-Voltage High-Power IGBT

IGBT module from  Hitachi. The new IGBT module makes high energy efficiency and silent operation of inverters possible. It has High thermal fatigue durability. It is a High speed and low loss IGBT module.

High-Voltage High-Power IGBT

Low noise due to soft and fast recovery diode. The driving power is less as the MOS gate input capacitance is very low. The modules are very reliable and durable. The heatsink has a Isolation between terminals and base.

High-Voltage High-Power IGBT

From 1700V to 6500V,  High Power Density, Low Inductance, Scalable, Easy Paralleling, Standard and High Isolation Package.

The Hitachi Power Semiconductor Devices mark a new era of Power electronics by High-Power IGBT modules, High-Voltage ICs and Power diodes.